, , ,

<<


 >>  ()
Pages:     | 1 |   ...   | 5 | 6 ||

. .. , (RIKEN) ...

-- [ 7 ] --

114. Shibata M. Observation and nucleation control of Ge nanoislands on Si(111) surfaces using scanning reflection microscope / M. Shibata, A. A. Shklyaev, M.

Ichikawa // J. Electron Microscopy. 2000. Vol. 49(2). P. 217-223.

115. Single and Highly Dense Germanium/Silicon Nanostructures / A.A. Shklyaev, M. Ichikawa // Handbook of Semiconductor Nanostructures and Nanodevices, Vol. 1 / edited by A. A. Balandin, K. L. Wang. California: American Scientific Publishers, 2006. Chapter 8. P. 337-387.

116. Thin film and growth theories: a conformation with experiment / S. Stoyanov, D. Kashchiev // Current Topic in Materials Science / edited by E. Kaldis. Amsterdam: North-Holland, 1981. - Vol. 7. P. 69-138.

117. Scaling description of sub-monolayer epitaxial growth in Evolution of Surface and Thin Film Microstructure / A. Zangwill // MRS Proceedings / edited by H. A.

Atwater, E. Chason, M. Grabow, M. Lagally // Pittsburgh: Materials Research Society, 1993. Vol. 280. P. 121-130.

118. Venables J. A. Atomic processes in crystal growth // Surf. Sci. 1994. Vol.

299/300. P. 798-817.

119. Zuo J. -K. Growth and coalescence in submonolayer homoepitaxy on Cu(100) studied with high-resolution low-energy electron diffraction / J. -K. Zuo, J. F.

Wendelken, H. Drr, C. -L. Liu // Phys. Rev. Lett. 1994. Vol. 72. P. 3064 3067.

120. Stroscio J. A. Scaling of diffusion-mediated island growth in iron-on-iron homoepitaxy / J. A. Stroscio, D. T. Pierce // Phys. Rev. B. 1994. Vol. 49. P.

8522-8525.

121. Amar J. G. Kinetics of submonolayer and multilayer epitaxial growth / J. G.

Amar, F. Family // Thin Solid Films. 1996. Vol. 272. P. 208-222.

122. Markov I. Surface energies from the transition from step-flow growth to two dimensional nucleation in metal homoepitaxy // Phys. Rev. B. 1997. Vol. 56.

P. 12544-12552.

123. Selloni A. Reconstraction and phase transitions at semiconductor surface:

Ge(111) / A. Selloni, N. Takeuchi, E. Tosatti // Surf. Sci. 1995. Vol. 331-333.

P. 995-1001.

124. Allen F.G. Field emission from silicon and germanium;

field desorption and surface migration // J. Phys. Chem. Sol. 1961. Vol. 19. P. 87-88.

125. Arthur J.R., Jr. Surface structure and surface migration of germanium by field emission microscopy // J. Phys. Chem. Sol. 1964. Vol. 25. P. 583-586.

126. Spencer B. J. Equilibrium shape and properties of epitaxially strained islands / B. J. Spencer, J. Tersoff // Phys. Rev. Lett. 1997. Vol. 79. P. 4858-4861.

127. LeGoues F. K. Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111) / F. K. LeGoues, M. Horn-von Hoegen, M. Copel, R.

M. Tromp // Phys. Rev. B. 1991. Vol. 44. P. 12894-12902.

128. Minoda H. In situ TEM observations of surfactant-mediated epitaxy: Growth of Ge on an Si(111) surface mediated by In / H. Minoda, Y. Tanishiro, N.

Yamamoto, K. Yagi // Surf. Sci. 1996. Vol. 358. P. 418-421.

129. Zinke-Allmang M. Clustering on surfaces / M. Zinke-Allmang, L. C. Feldman, M. H. Grabow // Surf. Sci. Rep. 1992. Vol. 16. P. 377-463.

130. . . - :

/ . . , . . , . . // 2001. T. 171. C. 689-715.

131. Deelman P. W. AFM and RHEED study of Ge islanding on Si(111) and Si(100) / P. W. Deelman, T. Thundat, L. J. Schwalter // Appl. Surf. Sci. 1996. Vol.

104/105. P. 510-515.

132. Gossman H. -J. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 1) and Si(111)-(7 7) / H. -J. Gossman, L. C. Feldman, W. M.

Gibson // Surf. Sci. 1985. Vol. 155. P. 413-431.

133. Hammar M. In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. Si(001)/Ge / M. Hammar, F. K. LeGoues, J. Tersoff, M. C. Reuter, R. M. Tromp // Surf. Sci. 1996. Vol. 349. P. 129-144.

134. Becker R. S. Tunneling images of the 5 5 surface reconstruction on Ge Si(111) / R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber // Phys. Rev. B.

1985. Vol. 32. P. 8455-8457.

135. Kajiyama K. Reconstructions and phase transitions of Ge on the Si(111)7 surface / K. Kajiyama, Y. Tanishiro, K. Takayanagi // Surf. Sci. 1989. Vol.

222. P. 38-46.

136. Latyshev A. V. UHV REM study of the anti-band structure on the vicinal Si(111) surface under heating by a direct electric current / A. V. Latyshev, A. L.

Aseev, A. B. Krasilinikov // Surf. Sci. 1994. Vol. 311. P. 395-403.

137. Krishnamurthy M. Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100) / M. Krishnamurthy, J. S. Drucker, J. A. Venables / J. Appl. Phys.

1991. Vol. 69. P. 6461-6471.

138. Fujita S. Nanostructure fabrication using the selective Thermal desorption of SiO2 induced by electron beams / S. Fujita, S. Maruno, H. Watanabe, M.

Ichikawa // Appl. Phys. Lett. 1996. Vol. 69. P. 638-640.

139. Fujita S. Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams / S. Fujita, S. Maruno, H. Watanabe, M. Ichikawa // J. Vac.

Sci. Technol. A. 1997. Vol. 15. P. 1493-1498.

140. Maruno S. Observation of selective thermal decomposition of electron stimulated SiO2 with a combined scanning reflection electron microscope/scanning tunneling microscopy / S. Maruno, S. Fujita, H. Watanabe, M. Ichikawa // J. Appl. Phys. 1997. Vol. 82. P. 639-643.

141. Watanabe H. Selective thermal decomposition of ultrathin silicon oxide layers induced by electron-stimulated oxygen desorption / H. Watanabe, S. Fujita, S.

Maruno, K. Fujita, M. Ichikawa // Appl. Phys. Lett. 1997. Vol. 71. P. 1038 1040.

142. Watanabe H. Development of a multifunctional surface analysis system based on a nanometer scale scanning electron beam: Combination of ultrahigh vacuum scanning electron microscopy, scanning reflection electron microscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy / H. Watanabe, M.

Ichikawa // Rev. Sci. Instrum. 1996. Vol. 67. P. 4185-4190.

143. Miyata N. Thermal decomposition of an ultrathin Si oxide layer around a Si(001)-(2 1) window / N. Miyata, H. Watanabe, M. Ichikawa // Phys. Rev.

Lett. 2000. Vol. 84. P. 1043-1046.

144. Stroscio J. A. Atomic and molecular manipulation with the scanning tunneling microscope / J. A. Stroscio, D. M. Eigler // Science. 1991. Vol. 254. P.

1319-1326.

145. Uchida H. Site-specific measurement of adatom binding-energy differences by atom extraction with the STM / H. Uchida, D. Huang, F. Grey, M. Aono // Phys.

Rev. Lett. 1993. Vol. 70. P. 2040-2043.

146. Kobayashi A. Formation of nanometer-scale grooves in silicon with a scanning tunneling microscope / A. Kobayashi, F. Grey, R. S. Williams, M. Aono // Science. 1993. Vol. 259. P. 1724-1726.

147. Dujardin G. Vertical manipulation of individual atoms by a direct STM tip surface contact on Ge(111) / G. Dujardin, A. Mayne, O. Robert, F. Rose, C.

Joachim, H. Tang // Phys. Rev. Lett. 1998. Vol. 80, No.14. P. 3085-3088.

148. Ichimiya A. Relaxation of nanostructures on the Si(111)(7 7) surface by high temperature scanning tunneling microscopy / A. Ichimiya, Y. Tanaka, K. Hayashi // Surf. Rev. Lett. 1998. Vol. 5, No 3&4. P. 821-832.

149. Shklyaev A. A. Formation of three-dimensional Si islands on Si(111) with a scanning tunneling microscope / A. A. Shklyaev, M. Shibata, M. Ichikawa // Appl. Phys. Lett. 1999. Vol. 74. P. 2140-2142.

150. Shklyaev A. A. Effect of tunneling current on the growth of silicon islands on Si(111) surfaces with a scanning tunneling microscope / A. A. Shklyaev, M.

Shibata, M. Ichikawa // Surf. Sci. 2000. Vol. 447. P. 149-155.

151. Shklyaev A. A. Formation of Ge nanoislands using a scanning tunneling microscope / A. A. Shklyaev, M. Shibata, M. Ichikawa // J. Appl. Phys. 2000. Vol. 88, 3. P. 1397-1400.

152. Shklyaev A. A. Kinetics of tip-induced island growth on Si(111) with a scanning tunneling microscope / A. A. Shklyaev, M. Shibata, M. Ichikawa // J.

Vac. Sci. Technol. B. 2000. Vol. 18, 5. P. 2339-2343.

153. Shklyaev A. A. Continuous transfer of Ge by the tip of a scanning tunneling microscope for formation of lines / A. A. Shklyaev, M. Shibata, M. Ichikawa // J.

Vac. Sci. Technol. B. 2001. Vol. 19, 1. P. 103-106.

154. Shklyaev A. A. Electron-beam initiated transfer of Ge from Ge islands on SiO surfaces to the tip of a scanning tunneling microscope / A. A. Shklyaev, M.

Ichikawa // Jpn. J. Appl. Phys. 2001. Vol. 40, Part 1, 5A. P. 3370-3374.

155. Shklyaev A. A. Nanostructures on oxidized Si surfaces fabricated with the scanning tunneling microscope tip under electron beam irradiation / A. A.

Shklyaev, M.Ichikawa // J. Vac. Sci. Technol. B. 2006. Vol. 24. P. 739-743.

156. . . / . . , . // . 2006. T. 176, 9. C. 913-930.

157. Chang C. S. Field evaporatio between a gold tip and a gold surface in the scanning tunneling microscope configuration / C. S. Chang, W. B. Su, T. T.

Tsong // Phys. Rev. Lett. 1994. Vol. 72, No. 4. P. 574-577.

158. Fujita D. Fabrication of gold nanostructures on a vicinal Si(111)7 7 surface using ultrahigh vacuum scanning tunneling microscope and a gold-coated tungsten tip / D. Fujita, Q. Jiang, H. Nejoh // J. Vac. Sci. Technol. B. 1996. Vol. 14. P. 3413-3419.

159. Heike S. Nanoneedle formation on silicon(111) surface using a scanning tunneling microscope / S. Heike, T. Hashizume, Y. Wada // J. Appl. Phys. 1996.

Vol. 80. P. 4182-4188.

160. Eigler D. M. An atomic switch realized with the scanning tunneling microscope / D. M. Eigler, C. P. Lutz, W. E. Rudge // Nature (London). 1991. Vol. 352. P. 600-603.

161. Tsong T. T. Direct observation of directional walk of single adatoms and adatom polarizability / T. T. Tsong, G. Kellogg // Phys. Rev. B. 1975. Vol.

12. P. 1343-1353.

162. Eigler D. M. Positioning single atoms with a scanning tunneling microscope / D. M. Eigler, E. K. Schweizer // Nature (London). 1990. Vol. 344. P. 524 526.

163. Kandel D. Microscopic theory of electromigration on semiconductor surfaces / D. Kandel, E. Kaxiras // Phys. Rev. Lett. 1996. Vol. 76. P. 1114-1117.

164. Binning G. Scanning tunneling microscopy / G. Binning, H. Rohrer // Surf. Sci.

1983. Vol. 126. P. 236-244.

165. Fu E. S. The effective charge in surface electromigration / E. S. Fu, D. -J. Liu, M. D. Johnson, J. D. Weeks, E. D. Williams // Surf. Sci. 1997. Vol. 385. P.

259-269.

166. Whitman L. J. Manipulation of adsorbed atoms and cration of new structures on room-temperature surfaces with a scanning tunneling microscope / L. J. Whitman, J. A. Stroscio, R. A. Dragoset, R. J. Celotta // Science. 1991. Vol. 251. P.

1206-1210.

167. Heskett D. Correlation of alkali metal-induced work function changes on semiconductor and metal-surfaces / D. Heskett, T. M. Wong, A. J. Smith, W. R.

Graham, N. J. DiNardo, E. W. Plummer // J. Vac. Sci. Technol. B. 1989. Vol.

7. P. 915-918.

168. Lyubinetsky I. Two mechanisms of scanning tunneling microscopy assisted nanostructure formation using precursor molecules / I. Lyubinetsky, S.

Mezhenny, W. J. Choyke, and J. T. Yates Jr. // J. Vac. Sci. Technol. A. 1999. Vol. 17. P. 1445-1451.

169. Becker R. S. Atomic-scale surface modifications using a tunneling microscope / R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber // Nature (London). 1987. Vol. 325. P. 419-421.

170. Ma Z. L. Atomic-scale modification on Si(111)7 7 surfaces / Z. L. Ma, N.

Liu, W. B. Zhao, Q. J. Gu, X. Ge, Z. Q. Xue, S. J. Pang // J. Vac. Sci. Technol. B.

1995. Vol. 13. P. 1212-1215.

171. Shibata M. Nanometer-scale Si selective epitaxial growth on Si surface windows in ultrathin oxide films fabricated using scanning tunneling microscopy / M. Shibata, Y. Nitta, K. Fujita, M. Ichikawa // Appl. Phys. Lett. 1998. Vol.

73. P. 2179-2181.

172. Lyding J. W. Nanoscale pattering and oxidation of H-passivated Si(100)-2 surfaces with an ultrahigh vacuum scanning tunneling microscope / J. W. Lyding, T. -C. Shen, J. S. Hubacek, J. R. Tucker, G. C. Abeln // Appl. Phys. Lett. 1994.

Vol. 64. P. 2010-2012.

173. Chen T. -C. Al nucleation on monohydride and Bare Si(001) surfaces: Atomic scale pattering / T. -C. Chen, C. Wang, J. R. Tucker // Phys. Rev. Lett. 1997. Vol. 78. P. 1271-1274.

174. Shklyaev A. A. Kinetics of initial oxidation of the Si(111)-7x7 surface near the critical conditions / A. A. Shklyaev, T. Suzuki // Surf. Sci. 1996. Vol. 357 358. P. 729-732.

175. Shklyaev A. A. Initial reactive sticking coefficient of O2 on Si(111)-7x7 at elevated temperatures / A. A. Shklyaev, T. Suzuki // Surf. Sci. 1996. Vol. 351.

P. 64-74.

176. Shklyaev A. A. Interaction of O2 and N2O with Si during the early stages of oxide formation // a NATO-series book: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices / editors: E.Garfunkel, E.Gusev, A.Vul', Dordrecht/Boston/London: Kluwer academic publishers, 1997. P. 277-287.

177. Shklyaev A. A. Critical oxide cluster size on Si(111) / A. A. Shklyaev, M.

Aono, T. Suzuki // Surf. Sci. 1999. Vol. 423. P. 61-69.

178. Schlier R. E. Structure and adsorption characteristics of clean surfaces of germanium and silicon / R. E. Schlier, H. E. Farnsworth // J. Chem. Phys. 1959.

Vol. 30. P. 917-926.

179. Carosella C. A. Oxygen sticking coefficients on clean (111) silicon surfaces / C.

A. Carosella, J. Comas // Surf. Sci. 1969. Vol. 15. P. 303-312.

180. Rovida G. Measurements of oxygen adsorption on Si(111) surfaces by LEED / G. Rovida, E. Zanazzi, E. Ferroni // Surf. Sci. 1969. Vol. 14. P. 93-102.

181. Kirby R.E. Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O2 on Si: I. Adsorption studies / R. E. Kirby, D.

Lichtman // Surf. Sci. 1974. Vol. 41. P. 447-466.

182. Guichar G. M. Structure dependent oxidation of clean Si(111) surfaces / G. M.

Guichar, C. A. Sebenner, G. A. Garry, M. Balkanski // Surf. Sci. 1976. Vol.

58. P. 374-378.

183. Wierenga P. E. Reflectometric study of dangling-bond surface states and oxygen adsorption on the clean Si(111)7 7 surface / P. E. Wierenga, A. van Silfhout, M. J. Sparnaay // Surf. Sci. 1979. Vol. 87. P. 43-52.

184. Morgen P. Oxygen adsorption on Si(111) in different modifications: 7 7, 1;

Ni, and sputtered / P. Morgen, W. Wurth, E. Umbach // Surf. Sci. 1985. Vol. 152-153. P. 1086-1095.

185. Gupta P. Oxidation kinetics of Si(111) 7 7 in the submonolayer regime / P.

Gupta, C. H. Mak, P. A. Coon, S. M. George // Phys. Rev. B. 1989. Vol. 40. P. 7739-7749.

186. Hfer U. Initial stages of oxygen adsorption on Si(111). II. The molecular precursor / U. Hfer, P. Morgen, W. Wurth, E. Umbach // Phys. Rev. B. 1989. Vol. 40. P. 1130-1145.

187. Engel T. The interaction of molecular and atomic oxygen with Si(100) and Si(111) // Surf. Sci. Rep. 1993. Vol. 18. P. 91-144.

188. Memmert U. Comparison between Si(100) and Si(111) in the reaction with oxygen at high temperatures / U. Memmert, M. L. Yu // Surf. Sci. Lett. 1991. Vol. 245. P. L185-L189.

189. Lander J. J. Low voltage electron diffraction study of the oxidation and reduction of silicon / J. J. Lander, J. Morrison // J. Appl. Phys. 1962. Vol. 33.

P. 2089-2092.

190. R. E. Walkup R. E. In situ measurements of SiO(g) production during dry oxidation of crystalline silicon / R. E. Walkup, S. I. Raider // Appl. Phys. Lett. 1988. Vol. 53. P. 888-890.

191. King D. A. Reaction-mechanism in chemisorption kinetics nitrogen on (100) plane of tungsten / D. A. King, M. G.Wells // Proc. R. Soc. London, Ser. A. 1974. Vol. 339. P. 245-269.

192. Weinberg W. H. Precursor intermediates and precursor-mediated surface reactions: General concepts, direct observations and indirect manifestations // Kinetics of Interface Reactions / edited by N. Grunze, H.J. Kreuzer. New York:

Springer-Verlag, 1987, P. 94-124.

193. Schell-Sorokin A. J. Low temperature oxidation of silicon (111) 7 7 surfaces / A. J. Schell-Sorokin, J. E. Demuth // Surf. Sci. 1985. Vol. 157. P. 273-296.

194. Miyake T. Molecular-beam study of stickig of oxygen on Si(100) / T.Miyake, S. Soeki, H. Kato, T. Nakamura, A. Namiki, H. Kamba, T. Suzaki // Phys. Rev.

B. 1990. Vol. 42. P. 11801-11807.

195. Ibach H. Vibrational study of the initial stages of the oxidation of Si(111) and Si(100) surfaces / H. Ibach, H. D. Bruchmann, H. Wagner // Appl. Phys. A. 1982. Vol. 29. P. 113-124.

196. Edamoto K. Oxidation of the Si(111)(7 7) surface: Electron energy loss spectroscopy, low-energy electron diffraction, and Auger electron spectroscopy studies / Y. Kubota, H. Kobayashi, M. Onchi, M. Nishijima // J. Chem. Phys. 1985. Vol. 83. P. 428-436.

197. Hfer U. Metastable molecular precursor for the dissociative adsorption of oxygen on Si(111) / P. Morgen, W. Wurth, E. Umbach // Phys. Rev. Lett. 1985.

Vol. 55. P. 2979-2982.

198. Avouris Ph. Atom-resolved surface chemistry: The early steps of Si(111)- oxidation / Ph. Avouris, I. -W. Lyo, F. Bozso // J. Vac. Sci. Technol. B. 1991. Vol. 9. P. 424-430.

199. Schubert B. A theoretical study of the initial stages of Si(111)77 oxidation. I.

The molecular precursor / B. Schubert, Ph. Avouris, R. Hoffman // J. Chem. Phys.

1993. Vol. 98. P. 7593-7605.

200. Silvestre C. Observation of a metastable precursor for adsorption of oxygen on Si(111) and the activation energy for chemisorption / C. Silvestre, M.Shayegan // Phys. Rev. B. 1988. Vol. 37. P. 10432-10435.

201. Goddard W. A. III The peroxy radical model for the chemisorption of O2 onto silicon surfaces / W. A. Goddard III, A. Redondo, T. C. McGill // Solid State Commun. 1976. Vol. 18. P. 981-984.

202. D'Evelyn M. P. Kinetics of the adsorption of O2 and of the desorption of SiO on Si(100) a molecular-beam, XPS, and ISS study / M. P. D'Evelyn, M. M. Nelson, T. Engel // Surf. Sci. 1987. Vol. 186. P. 75-114.

203. Yu M. L. Real-time study of oxygen reaction on Si(100) / M. L. Yu, B. N.

Eldridge // Phys. Rev. Lett. 1987. Vol. 58. P. 1691-1694.

204. Ohkubo K. SiO production from Si(100) and (111) surfaces by reaction with O beams / K. Ohkubo, Y. Igari, S. Tomoda, I. Kusunoki // Surf. Sci. 1992. Vol.

260. P. 44-52.

205. Engstrom J. R. The reaction of atomic oxygen with Si(100) and Si(111). 1.

Oxide decomposition, active oxidation and the transition to passive oxidation / J.

R. Engstrom, D. J. Bonser, M. M. Nelson, T. Engel // Surf. Sci. 1991. Vol.

256. P. 317-343.

206. Seiple J. Elevated temperature oxidation and etching of the Si(111) 7 surface observed with scanning tunneling microscopy / J. Seiple, J. Pecquet, Z.

Meng, J. P. Pelz // J. Vac. Sci. Technol. A. 1993. Vol. 11. P. 1649-1653.

207. Feltz A. High temperature scanning tunneling microscopy studies on the interaction of O2 with Si(111)-(77) surface / A. Feltz, U. Memmert, R.J.Behm // Surf. Sci. 1994. Vol. 314. P. 34-56.

208. Matsui F. Reinterpretation of the molecular O2 chemisorbate in the initial oxidation of the Si(111)7 7 surface / F. Matsui, H. W. Yeom, K. Amemiya, K.

Tono, T. Ohta // Phys. Rev. Lett. 2000. Vol. 85, No. 3. P. 630-633.

209. Okuyama H. A metastable precursor in the oxidation of Si(111)-(7 7) / H.

Okuyama, T. Miki, T. Aruga, M. Nishijima // Jpn. J. Appl. Phys. 2002. Vol.

41, No.12B. P. L1419-L1421.

210. Smith F. W. Reaction of oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2 / F. W. Smith, G. Ghidini // J. Electrochem. Soc. 1982. Vol. 129. P. 1300-1306.

211. Shklyaev A. A. Branching of critical conditions for Si(111)-7x7 oxidation / A.

A. Shklyaev, T. Suzuki // Phys. Rev. Lett. 1995. Vol. 75, 2. P. 272-275.

212. Tabe M. Initial stage of thermal oxidation of the Si(111)-(7 x 7) surface / M.

Tabe, T. T. Chiang, I. Lindau, and W. E. Spicer // Phys. Rev. B. 1986. Vol.

34. P. 2706-2717.

213. Ono Y. Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111)7 x 7 surfaces / Y. Ono, M. Tabe, H. Kageshima // Phys. Rev. B. 1993. Vol. 48. P. 14291-14300.

214. Seiple J. V. Scanning tunneling microscopy study of oxide nucleation and oxidation-induced roughening at elevated temperatures on the Si(001)-(2 x 1) surface / J. V. Seiple, J. P. Pelz // Phys. Rev. Lett. 1994. Vol. 73. P. 999 1002.

215. Borman V. D. Mechanism of submonolayer oxide formation on silicon surfaces upon thermal oxidation / V. D. Borman, E. P. Gusev, Yu. Yu. Lebedinski, V. I.

Troyan // Phys. Rev. B. 1994. Vol. 49. P. 5415-5423.

216. Shimizu N. On the vacancy formation and diffusion on the Si(111)7 surfaces under exposures of low oxygen pressure studied by in situ reflection electron microscopy / N. Shimizu, Y. Tanishiro, K. Takayanagi, K. Yagi // Surf.

Sci. 1987. Vol. 191. P. 28-44.

217. Sakamoto K. Molecular precursor of oxygen on Si(111)7 7 surface / S. Suto, W. Uchida // Surf. Sci. 1996. Vol. 357-358. P. 514-517.

218. Lothe J. Reconsideration of nucleation theory / J. Lothe and G. M. Pound // J.

Chem. Phys. 1962. Vol. 36. P. 2080-2085.

219. Walton D. Nucleation of vapor deposits // J. Chem. Phys. 1962. Vol. 37. P. 2182-2188.

220. Stowell M. J. Dependence of saturation nuclus density on deposition rate and substrate temperature in case o complete condensation // Philos. Mag. 1970. Vol. 21. P. 125-136.

221. A. A. - / A. A. , . . // 1975. T. XLV. C. 600-603.

222. Frantsuzov A. A. Growth of an oxide film on a clean silicon surface and the kinetics of its evaporation / A. A. Frantsuzov, N. I. Makrushin // Thin Solid Films. 1976. Vol. 32. P. 247-249.

223. Rubloff G. W. Defect microchemistry in SiO2/Si structures // J. Vac. Sci.

Technol. A. 1990. Vol. 8. P. 1857-1863.

224. Feltz F. A. Gas phase etching of Si(111)-(77) surfaces by oxygen observed by scanning tunneling microscopy / F. A. Feltz, M. Kulakov, H. E. Hessel, U.

Memmert, R. J. Behn // J. Vac. Sci. Technol. B. 1993. Vol. 11. P. 1955 1961.

225. Shklyaev A. A. Influence of growth conditions on subsequent submonolayer oxide decomposition on Si(111) / A. A. Shklyaev, M. Aono, T. Suzuki // Phys.

Rev. B. 1996. Vol. 54, 15. P. 10890-10895.

226. Memmert U. Influence of the 77-11 phase transition on the sticking of oxygen on Si(111) / U. Memmert, M. L. Yu // Chem. Phys. Lett. 1989. Vol.

164. P. 552-556.

227. . . Si(320) / . . , M. . // . 1982. 1. C. 96-98.

228. Wendelken J. F. Island morphology and adatom energy barriers during homoepitaxy on Cu(001) / J. F. Wendelken, H. Drr, J. -K. Zuo // Surf. Sci. 1995. Vol. 328. P. L527-L532.

229. . . // 5980786, 22 1987.

230. A. A. SiO SiO2 / A. A. , . . // / p. .

. . , 1989. P. 347-356.

231. Belousov I. I. Charge transport in MOS-structures with low-temperature silicon dioxide films / I. I. Belousov, V. M. Efimov, S. P. Sinitsa, V. V. Voontsov, A. A.

Shklyaev // phys. stat. (a). 1991. Vol. 125. P. 387-396.

232. Esaev D. G. Effect of hydrogen upon hot electron energy relaxation in SiO2 and Si3N4 / D. G. Esaev, V. M. Efimov, A. A. Shklyaev // Thin Solid Films. 1992.

Vol. 221. P. 160-165.

233. Shklyaev A. A. Plasma-enhanced reactivity evaporated deposition of SiO2 films / A. A. Shklyaev, A. S. Medvedev // Appl. Surf. Sci. 1995. Vol. 89. P. 49 55.

234. Sun Y. -K. Spatial inhomogeneity and void-growth kinetics in the decomposition of ultrathin oxide overlayers on Si(100) / Y. K. Sun, D. J.

Bonser, T. Engel // Phys. Rev. B. 1991. Vol. 43. P. 14309-14312.

235. Sun Y. -K. Thermal decomposition of ultrathin oxide layers on Si(100) / Y. -K.

Sun, D. J. Bonser, T. Engel // J. Vac. Sci. Technol. A. 1992. Vol. 10. P.

2314-2321.

236. Watanabe K. A study of Si(111) surface oxidation by temperature programmed desorption / K. Watanabe, H. Hirayama // Surf. Sci. 1994. Vol. 317. P.

L1125-L1128.

237. Nakamura K. G. Reactive scattering of O2 with the Si(111) surface: Resonance enhanced multiphoton ionization of SiO / K. G. Nakamura, M. Kitajima // J.

Chem. Phys. 1995. Vol. 102. P. 8569-8573.

238. Tromp R. High-temperature SiO2 decomposition at the SiO2/Si interface / R.

Tromp, G. W. Rubloff, P. Balk, F. K. LeGoues, E. J. Vanloenen // Phys. Rev.

Lett. 1985. Vol. 55. P. 2332-2335.

239. Kobayashi Y. Scanning tunneling microscope study on mid-desorption stages of native oxides on Si(111) / Y. Kobayashi, K. Sugii // J. Vac. Sci. Technol. B. 1991. Vol. 9. P. 748-751.

240. Oertel G. Growth of thin SiO2 films on clean Si(111) surfaces by low-pressure oxidation and their evaporation / G. Oertel, E. -H.Weber // Phys. Status. Solidi (a). 1977. Vol. 43. P. 141-150.

241. Udagawa M. The initial stages of the thermal oxidation of Si(001)2 1 surface studied by scanning tunneling microscopy / M. Udagawa, M. Niwa, I. Sumita // Jpn. J. Appl. Phys. 1993. Vol. 32. P. 282-285.

242. Lutz F. Substrate temperature dependence of the initial growth mode of SiO2 on Si(100)-(2 x 1) exposed to O2: A photoemission study / F. Lutz, J. L. Bishoff, L.

Kubler, D. Bolmont // Phys. Rev. B. 1989. Vol. 40. P. 10356-10361.

243. Van der Meulen Y.J. Kinetics of Thermal growth of ultre-thin layers of SiO2 on silicon. I. Experiment // J. Electrochem. Soc. 1972. Vol. 119. P. 530-534.

244. Hopper M. A. Thermal oxidation of silicon. In situ measurement of the growth rate using ellipsomentry / M. A. Hopper, R. A. Clark, L. Young // J. Electrochem.

Soc. 1975. Vol. 122. P. 1216-1222.

245. Kobayashi Y. Thermal clustering of very thin oxide formed on Si surfaces by N2O/O2 adsorption / Y. Kobayashi, K. Prabhakaran, T. Ogino // Surf. Sci. 1995.

Vol. 329. P. 167-178.

246. Sakamoto K. Electron-stimulated desorption (ESD) of the O2/Si(111) surface / K. Sakamoto, K. Nakatsuji, H. Daimon, T. Yonezawa, S. Suga // Surf. Sci. 1994. Vol. 306. P. 93-98.

247. Gelain C. Kinetics and mechanism of low-pressure, high-temperature oxidation of silicon II / C. Gelain, A. Cassuto, P.Le Goff // Oxid. Met. 1971. Vol. 3. P. 139-152.

248. Tom H. W. K. Investigation of the Si(111)-(7 7) surface by second-harmonic generation: oxidation and the effects of surface phosphorus / H. W. K. Tom, X.

D. Zhu, Y. R. Shen, G. A. Somorjai // Surf. Sci. 1986. Vol. 167. P. 167-176.

249. Wong J. Nozzle beam deposition of SiO2 films / J. Wong, T. M. Lu, S. Mehta // J. Vac. Sci. Technol. B. 1985. Vol. 3. P. 453-456.

250. OLeary M. J. Characterization of reactively evaporated SiOx thin films / M. J.

OLeary, J. H. Thomas III // J. Vac. Sci. Technol. A. 1987. Vol. 5. P. 106 109.

251. Kubasche O. Silicon monoxide pressures due to reaction between solid silicon and silica / O. Kubasche, T. G. Chart // J. Chem. Thermodyn. 1974. Vol. 6. P. 467-476.

252. Wagner C. Passivity during the oxidation of silicon at elevated temperatures // J. Appl. Phys. 1958. Vol. 29. P. 1295-1297.

253. Averin D. V. Mesoscopic Phenomena in Solids / D. V. Averin, K. K. Likharev// edited by B. Altshuler et al. Amsterdam: Elsevier, 1991. P. 173.

254. Shklyaev A. A. High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a SiO2 coverage / A. A. Shklyaev, M. Shibata, M. Ichikawa // Phys. Rev. B.

2000. Vol. 62, 3. P. 1540-1543.

255. Kolobov A. V. Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage / A. V. Kolobov, A. A. Shklyaev, H. Oyanagi, P. Fons, S.

Yamasaki, M. Ichikawa // Appl. Phys. Lett. 2001. Vol. 78, 17. P. 2563 2565.

256. Shklyaev A. A. Three-dimensional Si islands on Si(100) surfaces / A. A.

Shklyaev, M. Ichikawa // Phys. Rev. B. 2002. Vol. 65. P. 045307-1-6.

257. Shklyaev A. A. Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage / A. A. Shklyaev, M. Ichikawa // Surf. Sci. 2002. Vol. 514. P. 19-26.

258. Shklyaev A. A. Visible photoluminescence of Ge dots embedded in Si/SiO matrices / A. A. Shklyaev, M. Ichikawa // Appl. Phys. Lett. 2002. Vol. 80, 8. P. 1432-1434.

259. Kolobov A. V. Effect of the interface on the local structure of Ge--Si nanostructures / A. V. Kolobov, H. Oyanagi, K. Brunner, G. Abstreiter, Y.

Maeda, A. A. Shklyaev, S. Yamasaki, M. Ichikawa, K.Tanaka // J. Vac. Sci.

Technol. . 2002. Vol. 20. P. 1116-1119.

260. Kolobov A. V. Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy / A. V. Kolobov, H. Oyanagi, A. Frenkel, I. Robinson, J. Cross, S.

Wei, K. Brunner, G. Abstreiter, Y. Maeda, A. Shklyaev, M. Ichikawa, S.

Yamasaki, K. Tanaka // Nucl. Instr. and Meth. B. 2003. Vol. 199. P. 174 178.

261. Shklyaev A. A. Surface morphology of three-dimensional Si islands on Si(001) surfaces / A. A. Shklyaev, V. Zielasek // Surf. Sci. 2003. Vol. 541. P. 234 241.

262. Shklyaev A. A. Photoluminescence of Ge/Si structures grown on oxidized Si surfaces / A. A. Shklyaev, S. Nobuki, S. Uchida, Y. Nakamura, M. Ichikawa // Appl. Phys. Lett. 2006. Vol. 88. P. 121919-1-3.

263. Shklyaev A. A. Influence of growth and annealing conditions on photoluminescence of Ge/Si layers grown on oxidized Si surfaces / A. A.

Shklyaev, S. P. Cho, Y. Nakamura, N. Tanaka, M. Ichikawa // J. Phys.: Condens.

Matter. 2007. Vol. 19. P. 136004-1-8.

264. Shklyaev A. A. Photoluminescence of Si layers grown on oxidized Si surfaces / A. A. Shklyaev, Y. Nakamura, M. Ichikawa // J. Appl. Phys. 2007. Vol. 101.

P. 033532-1-5.

265. Schnittenhelm P. Photoluminescence study of the crossover from 2-dimensional to 3-dimensional growth for Ge on Si(100) / P. Schnittenhelm, M. Gail, J.

Brunner, J. F. Nutzel, G. Abstreiter // Appl. Phys. Lett. 1995. Vol. 67. P.

1292-1294.

266. Chaparro S. A. Strain relief via trench formation in Ge/Si(100) islands / S. A.


Chaparro, Y. Zhang, J. Drucker // Appl. Phys. Lett. 2000. Vol. 76. P. 3534 3536.

267. Horn-von Hoegen M. Surfactant-stabilized strained Ge cones on Si(001) / M.

Horn-von Hoegen, A. Al Falou, B. H. Mller, U. Khler, L. Andersohn, B.

Dahlheimer, M. Henzler // Phys. Rev. B. 1994. Vol. 49. P. 2637-2650.

268. Butz R. The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation / R. Butz, H. Lth // Thin Solid Films. 1998. Vol. 336. P. 69-72.

269. Kim J. Y. Growth temperature dependence on the formation of carbon-induced Ge quantum dots / J. Y. Kim, S. H. Ihm, J. H. Seok, C. H. Lee, Y. H. Lee, E. -K.

Suh, H. J. Lee // Thin Solid Films. 2000. Vol. 369. P. 96-99.

270. Barski A. Epitaxial growth of germanium dots on Si(001) surface covered by a very thin silicon oxide layer / A. Barski, M. Derivaz, J. L. Rouviere, D. Buttard // Appl. Phys. Lett. 2000. Vol. 77, N. 22. P. 3541-3543.

271. Yakimov A. I. Stark effect in type-II Ge/Si quantum dots / A. I. Yakimov, A. V.

Dvurechenskii, A. I. Nikiforov, B. B. Ulyanov, A. G. Milekhin, A. O. Govorov, S. Schulze, D. R. T. Zahn // Phys. Rev. B. 2003. Vol. 67, N. 12. P. 125318 1-5.

272. Kanjilal A. Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy / A.

Kanjilal, J. L. Hansen, P. Gaiduk, A. N. Larsen, N. Cherkashin, A. Claverie, P.

Normand, E. Kapelanakis, D. Skarlatos, D. Tsoukalas // Appl. Phys. Lett. 2003.

Vol. 82, N. 8. P. 1212-1214.

273. Li Q. Selective growth of Ge on Si(100) through vias of SiO2 nanotemplate using solid source molecular beam epitaxy / Q. Li, S. M. Han, S. R. Brueck, S.

Hersee, Y. B. Jiang, H. Xu // Appl. Phys. Lett. 2003. Vol. 83, N. 24. P.

5032-5034.

274. Derivaz M. Grazing incidence x-ray diffraction and atomic microscopy investigations of germanium dots grown on silicon (001) by successive depositions of germanium through a thin silicon oxide layer / M. Derivaz, P. No, R. Dianoux, A. Barski, A. Coati, Y. Garreau, C. Alandi // Appl. Phys. Lett. 2004. Vol. 84, N. 17. P. 3295-3297.

275. . . Ge - Si / . . , . . , . . , .

. , . . // . 2004. T. 46, 1. C. 80-82.

276. Shimizu N. Reflection electron microscope study of the initial stages of oxidation of Si(111)-7 7 surfaces / N. Shimizu, Y. Tanishiro, K. Kobayashi, K.

Takayanagi, K. Yagi // Ultramicroscopy. 1985. Vol. 18. P. 453-461.

277. Kosolobov S. S. In situ study of the interaction of oxygen with the Si(111) surface by ultrahigh-vacuum reflection electron microscopy / S. S. Kosolobov, A.

L. Aseev, A. V. Latyshev // Semiconductors. 2001. Vol. 35. P. 1038-1044.

278. Frantsuzov A. A. Temperature dependence of oxidation rate in clean Ge(111) / A. A. Frantsuzov, N. I. Makrushin // Surf. Sci. 1973. Vol. 40. P. 320-342.

279. Chambliss D. D. Nucleation with a critical cluster size of zero: Submonolayer Fe inclusions in Cu(100) / D. D. Chambliss, K. E. Johnson // Phys. Rev. B. 1994. Vol. 50. P. 5012-5015.

280. Zinke-Allmang M. Phase separation on solid surfaces: nucleation, coarsening and coalescence kinetics // Thin Solid Films. 1999. Vol. 346. P. 1-68.

281. Schmidt A. A. Comparative investigation of the nucleation and growth of fcc metal particles (Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au) on amorphous carbon and SiO substrates during vapor deposition at elevated temperatures / A. A. Schmidt, H.

Eggers, K. Herwig, R. Anton // Surf. Sci. 1996. Vol. 349. P. 301-316.

282. Heim K. R. Growth of nanometer-size metallic particles on CaF2(111) / K. R.

Heim, S. T. Coyle, G. G. Hembree, J. A. Venables, M. R. Scheinfein // J. Appl.

Phys. 1996. Vol. 80. P. 1161-1170.

283. Frankl D. R. Nucleation on substrates from the vapour phase / D. R. Frankl, J.

A. Venables // Adv. Phys. 1970. Vol. 19. P. 409-457.

284. Campbell C. T. Ultrathin metal films and particles on oxide surfaces: structural, electronic and chemisorptive properties // Surf. Sci. Rep. 1997. Vol. 27. P.

1-111.

285. Fujita K. Nanoscale Si selective homoepitaxial growth observed by scanning tunneling microscopy / K. Fujita, H. Watanabe, M. Ichilawa // J. Cryst. Growth. 1998. Vol. 188. P. 197-204.

286. Wei S. Local structures of isovalent and heterovalent dilute impurities in Si crystal probed by fluorescence x-ray absorption fine structures / S. Wei, H.

Oyanagi, H. Kawanami, K. Sakamoto, T. Sakamoto, K. Tamura, N. L. Saini, K.

Uosaki // J. Appl. Phys. 1997. Vol. 82. P. 4810-4815.

287. Sakamoto T. Intensity oscillations of reflection high-energy electron-diffraction during silicon molecular-beam epitaxial-growth / T. Sakamoto, N. J. Kawai, T.

Nakagawa, K. Ohta, T. Kojima // Appl. Phys. Lett. 1985. Vol. 47. P. 617 619.

288. Gossmann H. J. Delta Doping in Silicon / H. J. Gossmann, E. F. Schubert // CRC Crit. Rev. Solid State Mater. 1993. Vol. 18. P. 1-67.

289. Teichert C. Stress-induced self-organization of nanoscale structures in SiGe/si multiplayer films / C. Teichert, M. G. Lagally, L. J. Peticolas, J. C. Bean, J.

Tersoff // Phys. Rev. B. 1996. Vol. 53. P. 16334-16337.

290. Dorsch W. Strain-induced island scaling during Si1-xGex heteroepitaxy / W.

Dorsch, H. P. Strunk, H. Wawra, G. Wagner, J. Groenen, R. Carles // Appl. Phys.

Lett. 1998. Vol. 72. P. 179-181.

291. Ehrlich G. Atomic view of surface self-diffusion: tungsten on tungsten / G.

Ehrlich, F. G. Hudda // J. Chem. Phys. 1966. Vol. 44. P. 1039-1049.

292. Schwoebel R. L. Step motion on crystal surface // R. L. Schwoebel, E. J.

Chipsey // J. Appl. Phys. 1966. Vol. 37. P. 3682-3686.

293. Schwoebel R.L., Step motion on crystal surface. II // J. Appl. Phys. 1969. Vol. 40. P. 614-618.

294. Olshanetsky B. Z. LEED studies of clean high Miller index surfaces of silicon / B. Z. Olshanetsky, V. I. Mashanov // Surf. Sci. 1981. Vol. 111. P. 414-428.

295. Vescan L. Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices / L. Vescan, K. Grimm, C. Dieker // J. Vac.


Sci. Technol. B. 1998. Vol. 16. P. 1549-1554.

296. Shibata M. Facets formation of pyramidal Si nanocrystals selectively grown on Si(001) windows in ultrathin SiO2 films / M. Shibata, Y. Nitta, K. Fujita, M.

Ichkawa // J. Cryst. Growth. 2000. Vol. 220. P. 449-456.

297. Shibata M. Pyramidal Si nanocrystals with a quasiequilibrium shape selectively grown on Si(001) windows in ultrathin SiO2 films / M. Shibata, Y. Nitta, K.

Fujita, M. Ichikawa // Phys. Rev. B. 2000. Vol. 61. P. 7499-7505.

298. Eaglesham D. J. Equilibrium shape of Si / D. J. Eaglesham, A. E. White, L. C.

Feldman, N. Moriya, D. C. Jacobson // Phys. Rev. Lett. 1993. Vol. 70. P.

1643-1646.

299. Sudoh K. Kinetics of faceting driven by attractive step-step interactions on vicinal Si(113) / K. Sudoh, H. Iwasaki // Phys. Rev. Lett. 2001. Vol. 87. P.

216103-1-4.

300. Bermond J. M. The equilibrium shape of silicon / J. M. Bermond, J. J. Metois, X. Egea, F. Floret // Surf. Sci. 1995. Vol. 330. P. 48-60.

301. Ichimiya A. Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-(7x7) surface by scanning tunneling microscopy / A. Ichimiya, Y. Tanaka, K. Ishiyama // Phys. Rev. Lett. 1996. Vol. 76. P. 4721-4724.

302. Pavesi L. Optical gain in silicon nanocrystals / L. Pavesi, L. Dal Negro, C.

Mazzoleni, G. Franzo, F. Priolo // Nature (London). 2000. Vol. 408. P. 440 444.

303. Saranin A. A. Formation of Si nanodots arrays on the oxidized Si(100) surface / A. A. Saranin, A. V. Zotov, V. G. Kotlyar, O. A. Utas, K. V. Ignatovich, T. V.

Kasyanova, Y. S. Park, W. J. Park // Appl. Surf. Sci. 2005. Vol. 243. P.

199-203.

304. . . GeSi/Si(100) / . . , . .

, . . , . . , . . , . . // . 2002. T. 76, 6. C. 425-424.

305. Novikov A. V. Photoluminescence of Ge(Si)/Si(100) self-assembled islands in the near infra-red wavelength range / A. V. Novikov, D. N. Lobanov, A. N.

Yablonsky, Yu. N. Drozdov, N. V. Vostokov, Z. F. Krasilnik // Physica E. 2003. Vol. 16. P. 467-472.

306. Fukatsu S. Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot / S. Fukatsu, H. Sunamura, Y. Shiraki, S. Komiyama // Appl.

Phys. Lett. 1997. Vol. 71. P. 258-260.

307. Eberl K. Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes / K. Eberl, O. G. Schmidt, R. Duschl, O. Kienzle, E. Ernst, Y.

Rau // Thin Solid Films. 2000. Vol. 369. P. 33-38.

308. . . 2 Ge/Si / . .

, . . // . 2001. T. 35, . 9. C. 1143-1153.

309. Yakimov A. I. Interband absorption in charged Ge/Si type-II quantum dots / A.

I. Yakimov, N. P. Stepina, A. V. Dvurechenskii, A. I. Nikiforov, A. V. Nenashev // Phys. Rev. B. 2001. Vol. 63. P. 045312-1-6.

310. Yam V. Effect of the bimodal size distribution on the optical properties of self assembled Ge/Si(001) quantum dots / V. Yam, V. L. Thanh, U. Compagnon, U.

Gennser, P. Boucaud, D. Dbarre, D. Bouchier // Thin Solid Films. 2000. Vol.

380. P. 78-81.

311. Sunamura H. Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy / H. Sunamura, N. Usami, Y. Shiraki, S. Fukatsu // Appl. Phys. Lett. 1995. Vol. 66. P. 3024-3026.

312. Palange E. Atomic force microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) / E. Palange, G. Capellini, L. Di Gaspare, F. Evangelisti // Appl. Phys. Lett. 1996. Vol. 68. P. 2982-2984.

313. Schmidt O. G. Effect of overgrowth temperature on the photoluminescence of Ge/Si islands / O. G. Schmidt, U. Denker, K. Eberl, O. Kienzle, F. Ernst // Appl.

Phys. Lett. 2000. Vol. 77. P. 2509-2511.

314. Dunbar A. The effect of strain field seeding on the epitaxial growth of Ge islands on Si(001) / A. Dunbar, M. Halsall, P. Dawson, U. Bangert, M. Miura, Y.

Shiraki // Appl. Phys. Lett. 2001. Vol. 78. P. 1658-1660.

315. . . , SiO2 / . . , . .

, . . , . . , . . , . .

// . 2005. T. 47, 1. C. 80-82.

316. Fonseca A. Optical and structural study of Ge/Si quantum dots on Si(100) surfaces covered with a thin silicon oxide layer / A. Fonseca, E. Alves, J. P.

Leitao, N. A. Sobolev, M. C. Carmo, A. I. Nikiforov // Mat. Sci. Eng. B. 2005.

Vol. 124-125. P. 462-465.

317. Dashiell M. W. Photoluminescence investigation of photonless radiative recombination and thermal-stability of germanium hut ckusters on silicon (001) / M. W. Dashiell, U. Denker, O. G. Schmidt // Appl. Phys. Lett. 2001. Vol. 79.

P. 2261-2263.

318. Konle J. Self-assembled Ge-islands for photonic applications / J. Konle, H.

Presting, H. Kibbel // Physica E (Amsterdam). 2003. Vol. 16. P. 596-601.

319. . . / . . , . . , . . // . 1976. T, 23, 11. C. 651-653.

320. Kveder V. V. Dislocation-related electroluminescence at room temperature in plastically seformed silicon / V. V. Kveder, E. A. Steinman, S. A. Shevchenko, H.

G. Grimmeiss // Phys. Rev. B. 1995. Vol. 51. P. 10520-10526.

321. Leoni E. Dislocation Luminescence in plastically deformed silicon crystals:

effect of dislocation intersaction and oxygen decoration / E. Leoni, S. Binetti, B.

Pichaud, S. Pizzini // Eur. Phys. J. Appl. Phys. 2004. Vol. 27. P. 123-127.

323. Kveder V. Silicom light-emitting diodes based on dislocation related luminescence / V. Kveder, M. Badylevich, W. Schroter, M. Seibt, E. Steinman, A. Izotov // phys. stat. sol. (a). 2005. Vol. 202. P. 901-910.

322. Kittler M. Silicon-based light emitters / M. Kittler, M. Reiche, T. Arguirov, W.

Seifert, X. Yu // phys. stat. sol. (a). 2006. Vol. 203. P. 802-809.

324. . . Ge- / . .

, . . , . . , . . , . , .

. . // . 2004. T. 46, 1. C. 94-97.

325. Dvurechensky A. V. Molecular epitaxy and the electronic properties of Ge/Si heterosystems with quantum dots / A. V. Dvurechensky, A. I. Nikiforov, O. P.

Pchelyakov, S. A. Teys, A. I. Yakimov // Low Temp. Phys. 2004. Vol. 30. P. 877-884.

326. Yakimov A. I. Germanium Self-Assembled Quantum Dots on Silicon: Growth, Electronic Transport, Optical Phenomena, and Devices / A. I. Yakimov, A. V.

Dvurechenskii, A. I. Nikiforov // Handbook of Semiconductor Nanostructures and Nanodevices, Vol. 1 / edited by A. A. Balandin, K. L. Wang. California:

ASP, 2006. Chapter 2. P. 34-102.

327. Nakayama Y. Quantum regulation of Ge nanodot state by controlling barrier of the interface layer / Y. Nakayama, I. Matsuda, S. Hasegawa, M. Ichikawa // Appl.

Phys. Lett. 2006. Vol. 88. P. 253102-1-3.

328. Nakamura Y. Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy / Y.

Nakamura, K. Watanabe, Y. Fukuzawa, M. Ichikawa // Appl. Phys. Lett. 2005.

Vol. 87. P. 133119-1-3.

329. Konchenko A. Quantum confinement observed in Ge nanodots on an oxidized Si surface / A. Konchenko, Y. Nakayama, I. Matsuda, S. Hasegawa, Y.

Nakamura, M. Ichikawa // Phys. Rev. B. 2006. Vol. 73. P. 113311-1-4.

332. Blumenau A. T. Dislocation related photoluminescence / A. T. Blumenau, R.

Jones, S. Oberg, P. R. Briddon, T. Frauenheim // Phys. Rev. Lett. 2001. Vol.

87. P. 187404-1-4.

331. Castaldini A. Experimental evidence of dislocation related shallow states in p type Si / A. Castaldini, D. Cavalcoli, A. Cavallini, S. Pizzini // Phys. Rev. Lett. 2005. Vol. 95. P. 076401-1-4.

330. Liu F. Electronic and elastic properties of edge dislocation in Si / F. Liu, M.

Mostoller, V. Milman, F. Chisholm, T. Kaplan // Phys. Rev. B. 1995. Vol. 51.

P. 17192-17195.

333. Suezawa M. Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals / M. Suezawa, Y. Sasaki, K. Sumino // phys. stat. sol. (a). 1983.

Vol. 79. P. 173-181.

334. Landsberg P. T. Radiative decay in compound semiconductors // Solid-State Electron. 1967. Vol. 10. P. 513-537.

335. Canham L. T. Silicon quantum wire array fabrication by elecrochemical and chemical dissolution of wafers // Appl. Phys. Lett. 1990. Vol. 57. P. 1046 1048.

336. Takagahara T. Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials / T. Takagahara, K.Takeda // Phys. Rev.

B. 1992. Vol. 46. P. 15578-15581.

337. Kovalev D. Optical Properties of Si Nanocrystals / D. Kovalev, H. Heckler, G.

Polisski, F. Koch // Phys. Status Solidi B. 1999. Vol. 215. P. 871-932.

338. Feng D. H. Quantum size effects on exciton states in indirect-gap quantum dots / D. H. Feng, Z. Z. Xu, T. Q. Jia, X. X. Li, S. Q. Gong // Phys. Rev. B. 2003. Vol. 68. P. 035334-1- 339. Cullis A. G. The structural and luminescence properties of porous silicon / A. G.

Cullis, L. T. Canham, P. D. J. Calcott // J. Appl. Phys. 1997. Vol. 82. P.

909-965.

340. Tsybeskov L. Nanocrystalline-silicon superlattice produced by controlled recrystallization / L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, M. Zacharias, P. M. Fauchet, J. P. McCaffrey, D. J. Lockwood // Appl. Phys. Lett. 1998. Vol. 72. P. 43-45.

341. Franz G. Room-temperature elecroluminescence from Er-doped crystalline Si / G. Franz, F. Priolo, S. Coffa, A. Polman, A. Carnera // Appl. Phys. Lett. 1994.

Vol. 64. P. 2235-2237.

342. . . Er+ Si:Er, - / . . , . . , . .

, . . , . . // . 2005. T. 47. C. 95 98.

343. Kenyon A. J. Erbium in silicon // Semicond. Sci. Technol. 2005. Vol. 20. P. R65-R84.

345. Takeoka S. Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded in SiO2 matrices / S. Takeoka, M. Fujii, S. Hayashi, K.

Yamamoto // Phys. Rev. B. 1998. Vol. 58. P. 7921-7925.

347. Zhang D. Light-emission from thermally oxidized silicon nanopartcles / D.

Zhang, R. M. Kolbas, P. D. Milewski, D. J. Lichtenwalner, A. I. Kingon, J. M.

Zavada // Appl. Phys. Lett. 1994. Vol. 65. P. 2684-2585.

348. Zhuravlev K. S. Mechanism of photoluminescence of Si nanocrystals fabricated in a SiO2 matrix / K. S. Zhuravlev, A. M. Gilinsky, A. Yu. Kobitsky // Appl.

Phys. Lett. 1998. Vol. 73. P. 2962-2964.

349. Wolkin M. V. Electronic states and luminescence in porous silicon quantum dots: The role of oxygen / M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, C.

Delerue // Phys. Rev. Lett. 1999. Vol. 82. P. 197-200.

344. Min K. S. The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals / K. S. Min, K. V.

Shcheglov, C. M. Yang, H. A. Atwater, M. L. Brongersma, A. Polman // Appl.

Phys. Lett. 1996. Vol. 68. P. 2511-2513.

346. Nishikawa H. Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy / H. Nishikawa, R. E. Stahlbush, J. H. Stathis // Phys. Rev. B. 1999. Vol. 60. P. 15910-15918.

350. Nishikawa H. Defects in thermal oxide studied by photoluminescence spectroscopy / H. Nishikawa, J. H. Stathis, E. Cartier // Appl. Phys. Lett. 1999.

Vol. 75. P. 1219-1221.

351. Nishikawa H. Photoluminescence study of defects in ion-implanted thermal SiO2-films / H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, Y.Ohki // J. Appl. Phys. 1995. Vol. 78. P. 842-846.

352. Bisi O. Porous silicon: a quantum sponge structure for silicon based optoelectronics / S. Ossicini, L. Pavesi // Surf. Sci. Rep. 2000. Vol. 38. P. 5 126.



Pages:     | 1 |   ...   | 5 | 6 ||
 
 >>  ()





 
<<     |    
2013 www.libed.ru - -

, .
, , , , 1-2 .