, , ,

<<


 >>  ()
Pages:     | 1 |   ...   | 3 | 4 ||

...

-- [ 5 ] --

245. Yu A.Y.C., Snow E.H. Surface effects on metal-silicon contacts. J. Appl. Phys., 1968, v.39, 7, p.3008- 246. Yu Kin Man, Cheung S.K., Sands T., Jaklevic J.M., Cheung N.W., Haller E.E. Schottky barrier degratation of the W GaAs system after high-temperture annealing. J.Appl Phys., 1986, v.60, 9, p.3235- 247. Zhang D.H., Metal contacts to n-type AlGaAs grown by molecular beam epitaxy. Mater. Sci. and Eng. B, 1999,v.60, 3, p.189- 248. Zhu Shiyang, Detavernier C., Van Meirhaedre R.L., Qu Xin Ping, Ru Cuo-Ping, Cardon F., Li Bing-Zong. A BEEM stady Schottky barrier hight distributions of ultrathin CoSi2/ nSi(100) formed by solid phase eppitaxy. Semiconductors, Sci., and Technol., 2000, v.15, 4, p.349- 249. Zhu Shi-yang, Pu Guo-ping, Qu Xin-ping, Li Bing-xong.

Schottky barrier characteristics of polycrystalline and epitaxial CoSi2-nSi(111) contacts formed by solid state reaction. Chin. J. Semicond., 2001, v.22, 6, p.689- 250. Zhu Shiyang, van Meirhaeghe R.L., Detugernier C., Barrier hight inhomogeneities of epitaxial CoSi2 Schottky contacts on nSi(100) and (111). Chin. J. Semiconductor, 2000, v.21, 5, p.143- 251. Zhu Sliyang, Qu Xin-Ping, Van Meirhaeghe R.L Ballestic electron emission microscopy stadies of the temperature dependence of Schottky barrier height distribution in CoSi2 nSi (100) diodes formed by solid phase reaction. Solid-State Electron.2000, v.44, 12, p.2217- . .. I. 1.1. - ꅅ 1.2. - . 1.2.1. υ. 1.2.2. υ....... 1.3. ꅅ 1.3.1. ꅅ... 1.3.2. ...... 1.3.3. .. 1.3.4. .... II. 2.1 υ..... 2.1.1. 腅.... 2.1.2. .... 2.1.3. ..... 2.1.4. - ... 2.2. .... 2.2.1 ..... 2.2.2 ..... III. - 3.1. υ. 3.2. ....... 3.2.1. ... 3.2.2. υ.... 3.3. . 3.3.1. ⅅ... 3.3.2. 酅 IY. 4.1 . 4.1.1. ...... 4.1.2. 򅅅... 4.1.3. ....... 4.1.4. .. 4.1.5. /... 4.2 υ.. 4.2.1. ⅅ.... 4.2.2. 腅.. 4.2.3. . 4.3 υ.. 4.4. υ...... .... ...... - _ 08.05. 241/ 6090 1/ . 14,

Pages:     | 1 |   ...   | 3 | 4 ||
 
 >>  ()





 
<<     |    
2013 www.libed.ru - -

, .
, , , , 1-2 .